| PART |
Description |
Maker |
| SIP-1987HT-01-1001FC SIP-1987HT-01-1001FD SIP-1987 |
TaNFilm垄莽 High Temperature DIP and SIP Networks
TaNFilm庐 High Temperature DIP and SIP Networks
TaNFilm? High Temperature DIP and SIP Networks
|
IRC - a TT electronics Company.
|
| MWR-MWC01GC-01-1000-F MWR-MWC01GC-01-1000-G MWR-MW |
TaNFilm Microwave Chip Resistor
|
IRC - a TT electronics Company.
http://
|
| SON N989-01-10K-FA N989-01-10K-FB N989-01-10K-FF N |
TaNFilm? Flat Precision Resistor Array
|
Welwyn Components Limited
|
| A3195EU A3195LLT 3195 A3195LU A3195 A3195ELT |
PROTECTED, HIGH-TEMPERATURE, HALL-EFFECT LATCH WITH ACTIVE PULL-DOWN 保护，高温，霍尔效应锁存主动下拉
SENSOR IC CAC ANALOG OUT 8-DIP
PROTECTED. HIGH-TEMPERATURE. HALL-EFFECT LATCH WITH ACTIVE PULL-DOWN
Protected,High-Temperature,Oper-Collector Hall-Effect Latch(保护型，工作于高温，霍尔效应锁存器（
PROTECTED/ HIGH-TEMPERATURE/ HALL-EFFECT LATCH WITH ACTIVE PULL-DOWN
PROTECTED HIGH-TEMPERATURE HALL-EFFECT LATCH WITH ACTIVE PULL-DOWN
From old datasheet system
|
Allegro MicroSystems, Inc.
ALLEGRO[Allegro MicroSystems]
|
| C1206C105K3NACTU |
Ceramic, 150C-(CxxxxC), 1 uF, 10%, 25 V, 1206, X8L, SMD, MLCC, High Temperature, Temperature Stable
|
Kemet Corporation
|
| T1010H-6G T1010H-6G-TR T1010H-6T T1010H-6T-TR T101 |
High-temperature 10A sensitive gate Triacs
High temperature 10 A sensitive TRIACs
600 V, 10 A, TRIAC, TO-220AB
|
ST Microelectronics
STMicroelectronics
|
| TC1046VNB TC1046 TC1046VNBTR |
High Precision Temperature-to-Voltage Converter
The TC1046 is a linear output temperature sensor whose output voltage is directly proportional to measured temperature. The TC1046 ...
The TC1046 is a linear output temperature sensor whose output voltage is directly proportional to measured temperature. The TC1046 can accurately measure temperature from -40C to 125C. The output voltage range for this device is typically
|
Microchip Technology Inc.
MICROCHIP[Microchip Technology]
|
| ENC102D-10A ENC112D-10A ENC820D-10A ENC220D-10B EN |
±15kV ESD Protected, 5V, Low Power, High Speed and Slew Rate Limited, Full Duplex, RS-485/RS-422 Transceivers; Temperature Range: -40°C to 85°C; Package: 14-SOIC T&R
Ultra Low ON-Resistance, 1.65V to 4.5V, Single Supply, Quad SPDT (Dual DPDT) Analog Switch; Temperature Range: -40°C to 85°C; Package: 16-QFN
Dual LDO with Low Noise, Very High PSRR, and Low IQ; Temperature Range: -40°C to 85°C; Package: 10-DFN
STD MOV
Dual LDO with Low Noise, Very High PSRR, and Low IQ; Temperature Range: -40°C to 85°C; Package: 10-DFN 性病检验手
|
Central Semiconductor, Corp.
|
| MIC502105 MIC5021YM MIC5021YN |
Temperature Sensor IC; IC Function:Temperature Sensor IC; Package/Case:8-DIP; Mounting Type:Through Hole BUF OR INV BASED MOSFET DRIVER, PDIP8
Temperature Sensor IC; IC Function:Temperature Sensor IC; Package/Case:8-SOIC; Mounting Type:Surface Mount RoHS Compliant: Yes BUF OR INV BASED MOSFET DRIVER, PDSO8
High-Speed High-Side MOSFET Driver
|
Micrel Semiconductor, Inc.
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
